BCW60B Bipolar Transistor
Characteristics of BCW60B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 32 V
- Collector-Base Voltage, max: 32 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.1 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 180 to 310
- Transition Frequency, min: 125 MHz
- Noise Figure, max: 6 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
Pinout of BCW60B
Complementary PNP transistor
Replacement and Equivalent for BCW60B transistor
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