BC859BW Bipolar Transistor

Characteristics of BC859BW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC859BW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC859BW transistor can have a current gain of 200 to 450. The gain of the BC859AW will be in the range from 110 to 220, for the BC859CW it will be in the range from 420 to 800, for the BC859W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC859BW is the BC849BW.

Replacement and Equivalent for BC859BW transistor

You can replace the BC859BW with the BC807W, BC857BW, BC857W, BC858BW, BC858W, BC860BW, BC860W or FJX733.
If you find an error please send an email to mail@el-component.com