BC859CW Bipolar Transistor

Characteristics of BC859CW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC859CW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC859CW transistor can have a current gain of 420 to 800. The gain of the BC859AW will be in the range from 110 to 220, for the BC859BW it will be in the range from 200 to 450, for the BC859W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC859CW is the BC849CW.

Replacement and Equivalent for BC859CW transistor

You can replace the BC859CW with the BC857CW, BC857W, BC858CW, BC858W, BC860CW or BC860W.
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