BC860BW Bipolar Transistor

Characteristics of BC860BW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC860BW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC860BW transistor can have a current gain of 200 to 450. The gain of the BC860AW will be in the range from 110 to 220, for the BC860CW it will be in the range from 420 to 800, for the BC860W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC860BW is the BC850BW.

Replacement and Equivalent for BC860BW transistor

You can replace the BC860BW with the BC807W, BC856BW, BC856W, BC857BW, BC857W or FJX733.
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