BC849BW Bipolar Transistor

Characteristics of BC849BW Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1.2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC849BW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC849BW transistor can have a current gain of 200 to 450. The gain of the BC849AW will be in the range from 110 to 220, for the BC849CW it will be in the range from 420 to 800, for the BC849W it will be in the range from 110 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC849BW is the BC859BW.

Replacement and Equivalent for BC849BW transistor

You can replace the BC849BW with the 2SC4116, BC817W, BC847BW, BC847W, BC848BW, BC848W, BC850BW, BC850W or FJX945.
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