BC807W Bipolar Transistor

Characteristics of BC807W Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 100 to 600
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323
  • Electrically Similar to the Popular BC327 transistor

Pinout of BC807W

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC807W transistor can have a current gain of 100 to 600. The gain of the BC807-16W will be in the range from 100 to 250, for the BC807-25W it will be in the range from 160 to 400, for the BC807-40W it will be in the range from 250 to 600.

Complementary NPN transistor

The complementary NPN transistor to the BC807W is the BC817W.

BC807W Transistor in TO-92 Package

The BC327 is the TO-92 version of the BC807W.
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