BC857BW Bipolar Transistor

Characteristics of BC857BW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 200 to 450
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC857BW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC857BW transistor can have a current gain of 200 to 450. The gain of the BC857AW will be in the range from 110 to 220, for the BC857CW it will be in the range from 420 to 800, for the BC857W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC857BW is the BC847BW.

Replacement and Equivalent for BC857BW transistor

You can replace the BC857BW with the BC807W, BC856BW, BC856W, BC860BW, BC860W or FJX733.
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