BC859AW Bipolar Transistor
Characteristics of BC859AW Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -30 V
- Collector-Base Voltage, max: -30 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.1 A
- Collector Dissipation: 0.2 W
- DC Current Gain (hfe): 110 to 220
- Transition Frequency, min: 150 MHz
- Noise Figure, max: 1 dB
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: SOT-323
Pinout of BC859AW
Classification of hFE
Complementary NPN transistor
Replacement and Equivalent for BC859AW transistor
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