BC859AW Bipolar Transistor

Characteristics of BC859AW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 110 to 220
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC859AW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC859AW transistor can have a current gain of 110 to 220. The gain of the BC859BW will be in the range from 200 to 450, for the BC859CW it will be in the range from 420 to 800, for the BC859W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC859AW is the BC849AW.

Replacement and Equivalent for BC859AW transistor

You can replace the BC859AW with the 2SA1586, 2SA1588, BC807-16W, BC807W, BC857AW, BC857W, BC858AW, BC858W, BC860AW, BC860W, FJX1182, FJX2907A, FJX3906, FJX733, KTN2907AU, KTN2907U, MMBT3906WT1, MMBT3906WT1G, MMST2907A, MMST3906, MMST4403, PMST3906 or PMST4403.
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