BC858W Bipolar Transistor

Characteristics of BC858W Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 110 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC858W

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC858W transistor can have a current gain of 110 to 800. The gain of the BC858AW will be in the range from 110 to 220, for the BC858BW it will be in the range from 200 to 450, for the BC858CW it will be in the range from 420 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC858W is the BC848W.

Replacement and Equivalent for BC858W transistor

You can replace the BC858W with the BC857W, BC859W or BC860W.
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