FJX1182 Bipolar Transistor

Characteristics of FJX1182 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -35 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 0.15 W
  • DC Current Gain (hfe): 70 to 240
  • Transition Frequency, min: 200 MHz
  • Noise Figure, max: 2.8 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-323
  • Electrically Similar to the Popular 2SA1182 transistor

Pinout of FJX1182

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The FJX1182 transistor can have a current gain of 70 to 240. The gain of the FJX1182-O will be in the range from 70 to 140, for the FJX1182-Y it will be in the range from 120 to 240.

Replacement and Equivalent for FJX1182 transistor

You can replace the FJX1182 with the 2SA1588.
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