FJX1182 Bipolar Transistor
Characteristics of FJX1182 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -30 V
- Collector-Base Voltage, max: -35 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.5 A
- Collector Dissipation: 0.15 W
- DC Current Gain (hfe): 70 to 240
- Transition Frequency, min: 200 MHz
- Noise Figure, max: 2.8 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-323
- Electrically Similar to the Popular 2SA1182 transistor
Pinout of FJX1182
Classification of hFE
Replacement and Equivalent for FJX1182 transistor
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