BC860AW Bipolar Transistor

Characteristics of BC860AW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 110 to 220
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC860AW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC860AW transistor can have a current gain of 110 to 220. The gain of the BC860BW will be in the range from 200 to 450, for the BC860CW it will be in the range from 420 to 800, for the BC860W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC860AW is the BC850AW.

Replacement and Equivalent for BC860AW transistor

You can replace the BC860AW with the 2SA1586, BC807-16W, BC807W, BC856AW, BC856W, BC857AW, BC857W, FJX2907A, FJX733, KTN2907AU or MMST2907A.
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