MMBT3906WT1G Bipolar Transistor
Characteristics of MMBT3906WT1G Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -40 V
- Collector-Base Voltage, max: -40 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -0.2 A
- Collector Dissipation: 0.15 W
- DC Current Gain (hfe): 100 to 300
- Transition Frequency, min: 250 MHz
- Noise Figure, max: 5 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-323
- The MMBT3906WT1G is the lead-free version of the MMBT3906WT1 transistor
Pinout of MMBT3906WT1G
Replacement and Equivalent for MMBT3906WT1G transistor
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