2SD877-O Bipolar Transistor

Characteristics of 2SD877-O Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 110 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-66

Pinout of 2SD877-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD877-O transistor can have a current gain of 60 to 120. The gain of the 2SD877 will be in the range from 60 to 300, for the 2SD877-GR it will be in the range from 150 to 300, for the 2SD877-Y it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD877-O might only be marked "D877-O".

Complementary PNP transistor

The complementary PNP transistor to the 2SD877-O is the 2SB502A-O.

SMD Version of 2SD877-O transistor

The BDP953 (SOT-223) is the SMD version of the 2SD877-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD877-O transistor

You can replace the 2SD877-O with the 2N3767, 2N5427, 2N5428, 2N5429, 2N5430, 2N6465, 2N6466 or 2SC1113.
If you find an error please send an email to mail@el-component.com