2N3767 Bipolar Transistor
Characteristics of 2N3767 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 25 W
- DC Current Gain (hfe): 40 to 160
- Transition Frequency, min: 10 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-66
Pinout of 2N3767
SMD Version of 2N3767 transistor
Replacement and Equivalent for 2N3767 transistor
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