2N3767 Bipolar Transistor

Characteristics of 2N3767 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 4 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 40 to 160
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-66

Pinout of 2N3767

Here is an image showing the pin diagram of this transistor.

SMD Version of 2N3767 transistor

The BDP951 (SOT-223) and BDP953 (SOT-223) is the SMD version of the 2N3767 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2N3767 transistor

You can replace the 2N3767 with the 2SC1113.
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