2N5429 Bipolar Transistor

Characteristics of 2N5429 Transistor

Type: NPN
Collector-Emitter Voltage, max: 100 V
Collector-Base Voltage, max: 100 V
Emitter-Base Voltage, max: 6 V
Collector Current − Continuous, max: 7 A
Collector Dissipation: 40 W
DC Current Gain (h_fe): 30 to 120
Transition Frequency, min: 20 MHz
Operating and Storage Junction Temperature Range: -65 to +200 °C
Package: TO-66

Pinout of 2N5429

Here is an image showing the pin diagram of this transistor.

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