2SD877-Y Bipolar Transistor

Characteristics of 2SD877-Y Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 110 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-66

Pinout of 2SD877-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD877-Y transistor can have a current gain of 100 to 200. The gain of the 2SD877 will be in the range from 60 to 300, for the 2SD877-GR it will be in the range from 150 to 300, for the 2SD877-O it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD877-Y might only be marked "D877-Y".

Complementary PNP transistor

The complementary PNP transistor to the 2SD877-Y is the 2SB502A-Y.

SMD Version of 2SD877-Y transistor

The BDP953 (SOT-223) is the SMD version of the 2SD877-Y transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD877-Y transistor

You can replace the 2SD877-Y with the 2N5428, 2N5430 or 2SC1113.
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