2SD877 Bipolar Transistor

Characteristics of 2SD877 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 110 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 60 to 300
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-66

Pinout of 2SD877

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD877 transistor can have a current gain of 60 to 300. The gain of the 2SD877-GR will be in the range from 150 to 300, for the 2SD877-O it will be in the range from 60 to 120, for the 2SD877-Y it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD877 might only be marked "D877".

Complementary PNP transistor

The complementary PNP transistor to the 2SD877 is the 2SB502A.

SMD Version of 2SD877 transistor

The BDP953 (SOT-223) is the SMD version of the 2SD877 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD877 transistor

You can replace the 2SD877 with the 2SC1113.
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