2SB502A-O Bipolar Transistor

Characteristics of 2SB502A-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -10 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 50 to 140
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-66

Pinout of 2SB502A-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB502A-O transistor can have a current gain of 50 to 140. The gain of the 2SB502A will be in the range from 30 to 280, for the 2SB502A-R it will be in the range from 30 to 70, for the 2SB502A-Y it will be in the range from 100 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB502A-O might only be marked "B502A-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SB502A-O is the 2SD877-O.

SMD Version of 2SB502A-O transistor

The BDP954 (SOT-223) is the SMD version of the 2SB502A-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB502A-O transistor

You can replace the 2SB502A-O with the 2N6467 or 2N6468.
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