2N5427 Bipolar Transistor
Characteristics of 2N5427 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 80 V
- Collector-Base Voltage, max: 80 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 7 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 30 to 120
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-66
Pinout of 2N5427
Replacement and Equivalent for 2N5427 transistor
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