2SD877-GR Bipolar Transistor

Characteristics of 2SD877-GR Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 80 V
  • Collector-Base Voltage, max: 110 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 25 W
  • DC Current Gain (hfe): 150 to 300
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-66

Pinout of 2SD877-GR

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD877-GR transistor can have a current gain of 150 to 300. The gain of the 2SD877 will be in the range from 60 to 300, for the 2SD877-O it will be in the range from 60 to 120, for the 2SD877-Y it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD877-GR might only be marked "D877-GR".

SMD Version of 2SD877-GR transistor

The BDP953 (SOT-223) is the SMD version of the 2SD877-GR transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD877-GR transistor

You can replace the 2SD877-GR with the 2SC1113.
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