2SD1717 Bipolar Transistor

Characteristics of 2SD1717 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 120 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD1717

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1717 transistor can have a current gain of 60 to 200. The gain of the 2SD1717-P will be in the range from 100 to 200, for the 2SD1717-Q it will be in the range from 60 to 120, for the 2SD1717-S it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1717 might only be marked "D1717".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1717 is the 2SB1162.

Replacement and Equivalent for 2SD1717 transistor

You can replace the 2SD1717 with the 2SD1718, MJW3281A or MJW3281AG.
If you find an error please send an email to mail@el-component.com