2SD1289-P Bipolar Transistor

Characteristics of 2SD1289-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 120 V
  • Collector-Base Voltage, max: 120 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 60 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD1289-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1289-P transistor can have a current gain of 160 to 320. The gain of the 2SD1289 will be in the range from 60 to 320, for the 2SD1289-Q it will be in the range from 100 to 200, for the 2SD1289-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1289-P might only be marked "D1289-P".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1289-P is the 2SB966-P.

Replacement and Equivalent for 2SD1289-P transistor

You can replace the 2SD1289-P with the 2SC2579, 2SC2580, 2SC2581, 2SC4278, 2SC4278-F, 2SC4652 or 2SC4652-F.
If you find an error please send an email to mail@el-component.com