KTD1047-Y Bipolar Transistor

Characteristics of KTD1047-Y Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P
  • Electrically Similar to the Popular 2SD1047-E transistor

Pinout of KTD1047-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTD1047-Y transistor can have a current gain of 100 to 200. The gain of the KTD1047 will be in the range from 60 to 200, for the KTD1047-O it will be in the range from 60 to 120.

Replacement and Equivalent for KTD1047-Y transistor

You can replace the KTD1047-Y with the 2SD1047, 2SD1047-E, 2SD1047C, 2SD1717, 2SD1717-P, 2SD1718, 2SD1718-P, KTD1047B, KTD1047B-Y, MJW3281A or MJW3281AG.
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