KTD1047B Bipolar Transistor
Characteristics of KTD1047B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 140 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 60 to 200
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
- Electrically Similar to the Popular 2SD1047 transistor
Pinout of KTD1047B
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for KTD1047B transistor
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