KTD1047B Bipolar Transistor

Characteristics of KTD1047B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 140 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 60 to 200
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P
  • Electrically Similar to the Popular 2SD1047 transistor

Pinout of KTD1047B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTD1047B transistor can have a current gain of 60 to 200. The gain of the KTD1047B-O will be in the range from 60 to 120, for the KTD1047B-Y it will be in the range from 100 to 200.

Complementary PNP transistor

The complementary PNP transistor to the KTD1047B is the KTB817B.

Replacement and Equivalent for KTD1047B transistor

You can replace the KTD1047B with the 2SD1047, 2SD1717, 2SD1718, KTD1047, MJW3281A or MJW3281AG.
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