2SD1717-P Bipolar Transistor
Characteristics of 2SD1717-P Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 160 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 120 W
- DC Current Gain (hfe): 100 to 200
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
Pinout of 2SD1717-P
Classification of hFE
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SD1717-P transistor
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