2SD1717-P Bipolar Transistor

Characteristics of 2SD1717-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 120 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD1717-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1717-P transistor can have a current gain of 100 to 200. The gain of the 2SD1717 will be in the range from 60 to 200, for the 2SD1717-Q it will be in the range from 60 to 120, for the 2SD1717-S it will be in the range from 80 to 160.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1717-P might only be marked "D1717-P".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1717-P is the 2SB1162-P.

Replacement and Equivalent for 2SD1717-P transistor

You can replace the 2SD1717-P with the 2SD1718, 2SD1718-P, MJW3281A or MJW3281AG.
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