KTD1047 Bipolar Transistor
Characteristics of KTD1047 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 140 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 12 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 60 to 200
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
- Electrically Similar to the Popular 2SD1047 transistor
Pinout of KTD1047
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for KTD1047 transistor
If you find an error please send an email to mail@el-component.com