2SD1061 Bipolar Transistor

Characteristics of 2SD1061 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 70 to 280
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SD1061

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1061 transistor can have a current gain of 70 to 280. The gain of the 2SD1061-Q will be in the range from 70 to 140, for the 2SD1061-R it will be in the range from 100 to 200, for the 2SD1061-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1061 might only be marked "D1061".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1061 is the 2SB825.

Replacement and Equivalent for 2SD1061 transistor

You can replace the 2SD1061 with the 2SC3254, 2SC3255, 2SC3747, 2SC3748, 2SD1062, 2SD1668, 2SD1669, BD203, BD303, BD535, BD537, BD543A, BD543B, BD543C, BD545A, BD545B, BD545C, BD797, BD799, BD801, BD807, BD809, BDT81, BDT81F, BDT83, BDT83F, BDT85, BDT85F, BDX77, D44H11, D44H11FP or D44H8.
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