2SD1669 Bipolar Transistor

Characteristics of 2SD1669 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 70 to 280
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SD1669

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1669 transistor can have a current gain of 70 to 280. The gain of the 2SD1669-Q will be in the range from 70 to 140, for the 2SD1669-R it will be in the range from 100 to 200, for the 2SD1669-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1669 might only be marked "D1669".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1669 is the 2SB1136.

Replacement and Equivalent for 2SD1669 transistor

You can replace the 2SD1669 with the 2SD1062, BD545A, BD545B, BD545C, BDT81, BDT81F, BDT83, BDT83F, BDT85 or BDT85F.
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