2SD1264A-P Bipolar Transistor

Characteristics of 2SD1264A-P Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 180 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 2 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 100 to 240
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SD1264A-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1264A-P transistor can have a current gain of 100 to 240. The gain of the 2SD1264A will be in the range from 60 to 240, for the 2SD1264A-Q it will be in the range from 60 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1264A-P might only be marked "D1264A-P".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1264A-P is the 2SB940A-P.

Replacement and Equivalent for 2SD1264A-P transistor

You can replace the 2SD1264A-P with the 2SC4382, 2SC4883A, 2SC5171, 2SD772A, 2SD772B, 2SD792A, 2SD792B, KTD2061, MJE15032, MJE15032G, MJE15034 or MJE15034G.
If you find an error please send an email to mail@el-component.com