2SB772P Bipolar Transistor

Characteristics of 2SB772P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 160 to 320
  • Transition Frequency, min: 80 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB772P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB772P transistor can have a current gain of 160 to 320. The gain of the 2SB772 will be in the range from 60 to 400, for the 2SB772E it will be in the range from 200 to 400, for the 2SB772GR it will be in the range from 200 to 400, for the 2SB772O it will be in the range from 100 to 200, for the 2SB772Q it will be in the range from 100 to 200, for the 2SB772R it will be in the range from 60 to 120, for the 2SB772Y it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB772P might only be marked "B772P".

Complementary NPN transistor

The complementary NPN transistor to the 2SB772P is the 2SD882P.

Replacement and Equivalent for 2SB772P transistor

You can replace the 2SB772P with the 2SB1143, 2SB1165, 2SB1166, 2SB743, 2SB743-P, 2SB744, 2SB744-Y, 2SB744A, 2SB744A-Y, 2SB986, BD132, BD186, BD188, BD190, KSB744, KSB744-Y, KSB744A, KSB744A-Y, KSB772, KSB772-Y, KSH772, KSH772-Y, KTB772, KTB772-Y, MJE232, MJE235 or MJE370.
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