2SB1141-Q Bipolar Transistor

Characteristics of 2SB1141-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -18 V
  • Collector-Base Voltage, max: -20 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.2 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-126

Pinout of 2SB1141-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1141-Q transistor can have a current gain of 70 to 140. The gain of the 2SB1141 will be in the range from 70 to 400, for the 2SB1141-R it will be in the range from 100 to 200, for the 2SB1141-S it will be in the range from 140 to 280, for the 2SB1141-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1141-Q might only be marked "B1141-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1141-Q is the 2SD1681-Q.

Replacement and Equivalent for 2SB1141-Q transistor

You can replace the 2SB1141-Q with the 2SA715, 2SA738, 2SB559, 2SB743, 2SB772, BD186, KSB772, KSE210, KSH772, KTA1705, KTA1705-O, MJE210, MJE210G or MJE370.
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