2SB1135 Bipolar Transistor

Characteristics of 2SB1135 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 70 to 280
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SB1135

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1135 transistor can have a current gain of 70 to 280. The gain of the 2SB1135-Q will be in the range from 70 to 140, for the 2SB1135-R it will be in the range from 100 to 200, for the 2SB1135-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1135 might only be marked "B1135".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1135 is the 2SD1668.

Replacement and Equivalent for 2SB1135 transistor

You can replace the 2SB1135 with the 2SA1290, 2SA1291, 2SA1470, 2SA1471, 2SB1136, 2SB825, 2SB826, BD204, BD304, BD536, BD538, BD544A, BD544B, BD544C, BD546A, BD546B, BD546C, BD798, BD800, BD802, BD808, BD810, BDT82, BDT82F, BDT84, BDT84F, BDT86, BDT86F, BDX78, D45H11, D45H11FP or D45H8.
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