2SB826 Bipolar Transistor
Characteristics of 2SB826 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -50 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -12 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 70 to 280
- Transition Frequency, min: 10 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Pinout of 2SB826
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB826 transistor
If you find an error please send an email to mail@el-component.com