2SB826 Bipolar Transistor

Characteristics of 2SB826 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 70 to 280
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB826

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB826 transistor can have a current gain of 70 to 280. The gain of the 2SB826-Q will be in the range from 70 to 140, for the 2SB826-R it will be in the range from 100 to 200, for the 2SB826-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB826 might only be marked "B826".

Complementary NPN transistor

The complementary NPN transistor to the 2SB826 is the 2SD1062.

Replacement and Equivalent for 2SB826 transistor

You can replace the 2SB826 with the 2SB1136, BD546A, BD546B, BD546C, BDT82, BDT82F, BDT84, BDT84F, BDT86 or BDT86F.
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