KSB708-R Bipolar Transistor

Characteristics of KSB708-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 40 to 80
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular 2SB708-R transistor

Pinout of KSB708-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB708-R transistor can have a current gain of 40 to 80. The gain of the KSB708 will be in the range from 40 to 200, for the KSB708-O it will be in the range from 60 to 120, for the KSB708-Y it will be in the range from 100 to 200.

Complementary NPN transistor

The complementary NPN transistor to the KSB708-R is the KSD569-R.

Replacement and Equivalent for KSB708-R transistor

You can replace the KSB708-R with the 2N6134, 2N6491, 2N6491G, 2SA1010, 2SA1010M, 2SB708, 2SB708-R, BD538, BD538K, BD710, BD712, BD744B, BD744C, BD800, BD802, BD810, BD910, BD912, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDT94, BDT94F, BDT96, BDT96F, BDX78, KSA1010, KSA1010R, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031, MJF15031G, MJF2955 or MJF2955G.
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