KSB708-Y Bipolar Transistor

Characteristics of KSB708-Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 100 to 200
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular 2SB708-Y transistor

Pinout of KSB708-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB708-Y transistor can have a current gain of 100 to 200. The gain of the KSB708 will be in the range from 40 to 200, for the KSB708-O it will be in the range from 60 to 120, for the KSB708-R it will be in the range from 40 to 80.

Complementary NPN transistor

The complementary NPN transistor to the KSB708-Y is the KSD569-Y.

Replacement and Equivalent for KSB708-Y transistor

You can replace the KSB708-Y with the 2SA1010, 2SA1010K, 2SA1077, 2SA1329, 2SA1452, 2SA1452A, 2SB1018, 2SB1018A, 2SB708, 2SB708-Y, 2SB870, 2SB946, 2SB992, BD538, BD544B, BD544C, BD546B, BD546C, BD800, BD802, BD810, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDT94, BDT94F, BDT96, BDT96F, BDX78, D45H11, D45H11FP, KSA1010, KSA1010Y, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
If you find an error please send an email to mail@el-component.com