2N6491G Bipolar Transistor

Characteristics of 2N6491G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -90 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 75 W
  • DC Current Gain (hfe): 20 to 150
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220
  • The 2N6491G is the lead-free version of the 2N6491 transistor

Pinout of 2N6491G

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6491G transistor

You can replace the 2N6491G with the 2N6491, BD744B, BD744C, BD910 or BD912.
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