2N6491 Bipolar Transistor

Characteristics of 2N6491 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -90 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 75 W
  • DC Current Gain (hfe): 20 to 150
  • Transition Frequency, min: 5 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of 2N6491

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6491 transistor

You can replace the 2N6491 with the 2N6491G, BD744B, BD744C, BD910 or BD912.

Lead-free Version

The 2N6491G transistor is the lead-free version of the 2N6491.
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