BD710 Bipolar Transistor

Characteristics of BD710 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 75 W
  • DC Current Gain (hfe): 15 to 150
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-220

Pinout of BD710

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BD710 is the BD709.

Replacement and Equivalent for BD710 transistor

You can replace the BD710 with the BD712, BD910 or BD912.
If you find an error please send an email to mail@el-component.com