MJF2955G Bipolar Transistor

Characteristics of MJF2955G Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -90 V
  • Collector-Base Voltage, max: -90 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 20 to 100
  • Transition Frequency, min: 2 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F
  • Electrically Similar to the Popular MJE2955T transistor
  • The MJF2955G is the lead-free version of the MJF2955 transistor

Pinout of MJF2955G

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MJF2955G is the MJF3055G.

Replacement and Equivalent for MJF2955G transistor

You can replace the MJF2955G with the BD712, BD744C, BD912, BDT96, BDT96F or MJF2955.
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