KSB708-O Bipolar Transistor

Characteristics of KSB708-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -80 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 60 to 120
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220
  • Electrically Similar to the Popular 2SB708-O transistor

Pinout of KSB708-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB708-O transistor can have a current gain of 60 to 120. The gain of the KSB708 will be in the range from 40 to 200, for the KSB708-R it will be in the range from 40 to 80, for the KSB708-Y it will be in the range from 100 to 200.

Complementary NPN transistor

The complementary NPN transistor to the KSB708-O is the KSD569-O.

Replacement and Equivalent for KSB708-O transistor

You can replace the KSB708-O with the 2N6491, 2N6491G, 2SA1010, 2SA1010L, 2SA1077, 2SB708, 2SB708-O, 2SB870, 2SB870-R, 2SB946, 2SB946-R, BD538, BD544B, BD544C, BD546B, BD546C, BD710, BD712, BD744B, BD744C, BD800, BD802, BD810, BD910, BD912, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDT94, BDT94F, BDT96, BDT96F, BDX78, D45H11, D45H11FP, KSA1010, KSA1010O, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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