2SB870 Bipolar Transistor

Characteristics of 2SB870 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -80 V
  • Collector-Base Voltage, max: -130 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 60 to 260
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB870

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB870 transistor can have a current gain of 60 to 260. The gain of the 2SB870-P will be in the range from 130 to 260, for the 2SB870-Q it will be in the range from 90 to 180, for the 2SB870-R it will be in the range from 60 to 120.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB870 might only be marked "B870".

Complementary NPN transistor

The complementary NPN transistor to the 2SB870 is the 2SD866.

Replacement and Equivalent for 2SB870 transistor

You can replace the 2SB870 with the 2SB946, BD538, BD544B, BD544C, BD546B, BD546C, BD800, BD802, BD810, BDT84, BDT84F, BDT86, BDT86F, BDT88, BDT88F, BDX78, D45H11, D45H11FP, MJE15029, MJE15029G, MJE15031, MJE15031G, MJF15031 or MJF15031G.
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