KSB1151-G Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -60 V
• Collector-Base Voltage, max: -60 V
• Emitter-Base Voltage, max: -7 V
• Collector Current − Continuous, max: -5 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 200 to 400
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126
• Electrically Similar to the Popular 2SB1151-K transistor

Here is an image showing the pin diagram of this transistor.The KSB1151-G transistor can have a current gain of 200 to 400. The gain of the KSB1151 will be in the range from 100 to 400, for the KSB1151-O it will be in the range from 100 to 200, for the KSB1151-Y it will be in the range from 160 to 320.The complementary NPN transistor to the KSB1151-G is the KSD1691-G.The 2STF2360 (SOT-89), 2STN2360 (SOT-223) and BDP950 (SOT-223) is the SMD version of the KSB1151-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the KSB1151-G with the 2SB1151, 2SB1151-K, KTB1151 or KTB1151-Y.