KTB1151 Bipolar Transistor

Characteristics of KTB1151 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 160 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SB1151 transistor

Pinout of KTB1151

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB1151 transistor can have a current gain of 160 to 400. The gain of the KTB1151-O will be in the range from 160 to 320, for the KTB1151-Y it will be in the range from 200 to 400.

Complementary NPN transistor

The complementary NPN transistor to the KTB1151 is the KTD1691.

SMD Version of KTB1151 transistor

The 2STF2360 (SOT-89), 2STN2360 (SOT-223) and BDP950 (SOT-223) is the SMD version of the KTB1151 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KTB1151 transistor

You can replace the KTB1151 with the 2SB1151 or KSB1151.
If you find an error please send an email to mail@el-component.com