KSB1151-O Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -60 V
• Collector-Base Voltage, max: -60 V
• Emitter-Base Voltage, max: -7 V
• Collector Current − Continuous, max: -5 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 100 to 200
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126
• Electrically Similar to the Popular 2SB1151-M transistor

Here is an image showing the pin diagram of this transistor.The KSB1151-O transistor can have a current gain of 100 to 200. The gain of the KSB1151 will be in the range from 100 to 400, for the KSB1151-G it will be in the range from 200 to 400, for the KSB1151-Y it will be in the range from 160 to 320.The complementary NPN transistor to the KSB1151-O is the KSD1691-O.The BDP950 (SOT-223) is the SMD version of the KSB1151-O transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the KSB1151-O with the 2SB1151 or 2SB1151-M.