KSD1691-G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 60 V
• Collector-Base Voltage, max: 60 V
• Emitter-Base Voltage, max: 7 V
• Collector Current − Continuous, max: 5 A
• Collector Dissipation: 20 W
• DC Current Gain (h_fe): 200 to 400
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-126
• Electrically Similar to the Popular 2SD1691-K transistor

Here is an image showing the pin diagram of this transistor.The KSD1691-G transistor can have a current gain of 200 to 400. The gain of the KSD1691 will be in the range from 100 to 400, for the KSD1691-O it will be in the range from 100 to 200, for the KSD1691-Y it will be in the range from 160 to 320.The complementary PNP transistor to the KSD1691-G is the KSB1151-G.The BDP949 (SOT-223) is the SMD version of the KSD1691-G transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the KSD1691-G with the 2SD1691, 2SD1691-K, KTD1691 or KTD1691-Y.