KSB1151-Y Bipolar Transistor

Characteristics of KSB1151-Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 160 to 320
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SB1151-L transistor

Pinout of KSB1151-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSB1151-Y transistor can have a current gain of 160 to 320. The gain of the KSB1151 will be in the range from 100 to 400, for the KSB1151-G it will be in the range from 200 to 400, for the KSB1151-O it will be in the range from 100 to 200.

Complementary NPN transistor

The complementary NPN transistor to the KSB1151-Y is the KSD1691-Y.

SMD Version of KSB1151-Y transistor

The 2STF2360 (SOT-89), 2STN2360 (SOT-223), BDP950 (SOT-223) and STN951 (SOT-223) is the SMD version of the KSB1151-Y transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KSB1151-Y transistor

You can replace the KSB1151-Y with the 2SB1151, 2SB1151-L, KTB1151 or KTB1151-O.
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