2SB1151-K Bipolar Transistor

Characteristics of 2SB1151-K Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 200 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB1151-K

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1151-K transistor can have a current gain of 200 to 400. The gain of the 2SB1151 will be in the range from 100 to 400, for the 2SB1151-L it will be in the range from 160 to 320, for the 2SB1151-M it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1151-K might only be marked "B1151-K".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1151-K is the 2SD1691-K.

SMD Version of 2SB1151-K transistor

The 2STF2360 (SOT-89), 2STN2360 (SOT-223) and BDP950 (SOT-223) is the SMD version of the 2SB1151-K transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB1151-K transistor

You can replace the 2SB1151-K with the KSB1151, KSB1151-G, KTB1151 or KTB1151-Y.
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