KTB1151-Y Bipolar Transistor

Characteristics of KTB1151-Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -7 V
  • Collector Current − Continuous, max: -5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 200 to 400
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SB1151-K transistor

Pinout of KTB1151-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB1151-Y transistor can have a current gain of 200 to 400. The gain of the KTB1151 will be in the range from 160 to 400, for the KTB1151-O it will be in the range from 160 to 320.

Complementary NPN transistor

The complementary NPN transistor to the KTB1151-Y is the KTD1691-Y.

SMD Version of KTB1151-Y transistor

The 2STF2360 (SOT-89), 2STN2360 (SOT-223) and BDP950 (SOT-223) is the SMD version of the KTB1151-Y transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for KTB1151-Y transistor

You can replace the KTB1151-Y with the 2SB1151, 2SB1151-K, KSB1151 or KSB1151-G.
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