HSD1609 Bipolar Transistor
Characteristics of HSD1609 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 160 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.1 A
- Collector Dissipation: 1.25 W
- DC Current Gain (hfe): 60 to 320
- Transition Frequency, min: 145 MHz
- Operating and Storage Junction Temperature Range: -50 to +150 °C
- Package: TO-126
- Electrically Similar to the Popular 2SD1609 transistor
Pinout of HSD1609
Classification of hFE
Complementary PNP transistor
Replacement and Equivalent for HSD1609 transistor
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