HSD1609 Bipolar Transistor

Characteristics of HSD1609 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 160 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 1.25 W
  • DC Current Gain (hfe): 60 to 320
  • Transition Frequency, min: 145 MHz
  • Operating and Storage Junction Temperature Range: -50 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD1609 transistor

Pinout of HSD1609

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The HSD1609 transistor can have a current gain of 60 to 320. The gain of the HSD1609-B will be in the range from 60 to 120, for the HSD1609-C it will be in the range from 100 to 200, for the HSD1609-D it will be in the range from 160 to 320.

Complementary PNP transistor

The complementary PNP transistor to the HSD1609 is the HSB1109.

Replacement and Equivalent for HSD1609 transistor

You can replace the HSD1609 with the 2SC2258, 2SC2690A, 2SC3416, 2SC3417, 2SC3502, 2SC3503, 2SC3600, 2SC3601, 2SC3788, 2SC3789, 2SC3790, 2SC3955, 2SC3956, 2SD1609, 2SD1610, BD127, BD128, KSC2258, KSC2258A, KSC2690A, KSC3502 or KSC3503.
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