2SD669A-B Bipolar Transistor

Characteristics of 2SD669A-B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 160 V
  • Collector-Base Voltage, max: 180 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SD669A-B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD669A-B transistor can have a current gain of 60 to 120. The gain of the 2SD669A will be in the range from 60 to 200, for the 2SD669A-C it will be in the range from 100 to 200.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD669A-B might only be marked "D669A-B".

Complementary PNP transistor

The complementary PNP transistor to the 2SD669A-B is the 2SB649A-B.
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