2SD669A-B Bipolar Transistor
Characteristics of 2SD669A-B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 160 V
- Collector-Base Voltage, max: 180 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 1.5 A
- Collector Dissipation: 20 W
- DC Current Gain (hfe): 60 to 120
- Transition Frequency, min: 140 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
Pinout of 2SD669A-B
Classification of hFE
Marking
Complementary PNP transistor
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